Publications

S.V.GAPONOV, B.A.GRIBKOV, V.L.MIRONOV, N.N.SALASHCHENKO, D.G.VOLGUNOV. AFM investigations of the nanoscale roughness of polymer replicas on the glass substrates. SPM-2002, Proceedings. P. 140

A.V.LATYSHEV, S.S.KOSOLOBOV, D.A.NASIMOV, E.A.RODYAKINA. Atomic force microscopy of silicon stepped surface. SPM-2002, Proceedings. P. 11.

A.V.ZHIKHAREV, S.G.BYSTROV, P.V.BYKOV, A.YU.DROZDOV, V.YA.BAYANKIN. Influence of Si+ and Ar+ implantation on surface layer structure and mechanical characteristics of titanium alloy. SPM-2002, Proceedings. P. 160

D.L.ZAGORSKI, A.I.VILENSKY, G.S.ZHDANOV*, B.V.MCHEDLISHVILI. AFM investigation of the track structure in polymer films. SPM-2002, Proceedings. P. 217

A.EFIMOV, S.SAUNIN. Atomic Force Acoustic Microscopy as a tool for polymer elastisity analysis. SPM-2002, Proceedings. P. 79

E.A.VOPILKIN, N.V.VOSTOKOV,

V.A.BYKOV. Modern Tendency of the SPM Technique Developments. SPM-2002, Proceedings. P. 78

B.N.ZAITSEV, A.G.DURYMANOV, V.M.GENERALOV. Atomic Force Microscopy of the Interaction of Erythrocyte Membrane and Virus Particles. SPM-2002, Proceedings. P. 211

H.KACZMAREK , D.L.ZAGORSKI , M.

A.S.ELKADY, A.ALEXEEV, Y.SEBYAKIN, M.GALLYAMOV, A.MOSKOVOTSOV, G.BISCHOFF, R.ZHDANOV, A.R.KHOKHLOV. DNA Supramolecular Complexes : Structural and Functional Peculiarities as Studied by Scanning Atomic Force Microscopy. SPM-2002, Proceedings. P. 181

A.M.ALEXEEV, E.A.KOSOBRODOVA, I.V.MYAGKOV. Graphoepitaxy of Langmuir monomolecular layers. SPM-2002, Proceedings. P. 135

D.H. Qin, M. Lu, H.L. Li. Magnetic force microscopy of magnetic domain structure in highly ordered Co nanowire arrays. Chemical Physics Letters 350, 51-56 (2001).

V. Shashkin, S. Rushworth, V. Daniltsev, A. Murel, Yu. Drozdov, S. Gusev, O. Khrykin, N. Vostokov. Microstructure and Properties of Aluminum Contacts Formed on GaAs(100) by Low Pressure Chemical Vapor Deposition with Dimethylethylamine Alane Source. Journal of Electronic Materials, 30, N8, p.980-986 (2001).

V. N. Bessolov, Yu. V. Zhilyaev, E. V. Konenkova, S. A. Kukushkin, A. V. Luk'yanov, S. D. Raevski , and V. A. Fedirko. Initial Stages of the GaN Growth on Oxidized Silicon Techn. Phys. Lett. 27, 1010 (2001).

S. S. Kosolobov, A. L. Aseev, A. V. Latyshev. In Situ Study of Interaction of Oxygen with the Si(111) Surface by Ultrahigh-Vacuum Reflection Electron Microscopy. Semiconductors, 35, 1038 (2001).

A.V. Latyshev, S.S. Kosolobov, D.A. Nasimov, V.N. Savenko, A.L. Aseev. Atomic steps on the single crustal surface during epitaxy, sublimation and gas reaction. Journal of Japanese Association of Crystal Growth, in press.

V.M.Danil

N. V. Vostokov, D. M. Gaponova, V. M. Daniltsev, Yu. N. Drozdov, O. I. Khrykin,V. Murel, V. I. Shashkin, I. Yu. Shuleshova. "Investigation of InGaAs Based Double - Quantum Well Heterostructures Near the Critical Thickness Transition."//Physics of Low-Dimensional Structures, 3/4 (2001), pp. 303-307.