Surface of a SiO2(SnOx)AgOy film which process of maturing occured at 450oC annealing temperature. This film has been received by sol-gel method. The basic components of a solution were: tetraethoxycilane, alcohol and water. To track evolution of a surface formation under influence the temperatures received films from researched solutions after centrifuge deposition on a silicon substrate, dryings at 120oC, was annealed in a 300-550oC range of temperatures.
Image courtesy of Smirnov V.A., Taganrog State University Of Radioengineering.
The sample was kindly given by Petrov V.V., Taganrog State University Of Radioengineering.
