Monolayer steps on the Si surface
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Monolayer steps on the Si surface

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Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.
Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA

monolayer-steps-on-the-si-surface-1
monolayer-steps-on-the-si-surface-1
Topography

size: 5x5x0.0045 um
SPM principle: Intermittent contact mode
si_low_t_buffer3
Monolayer steps on the Si surface
Monolayer steps, 0.14 nm high, on the Si (001) surface after growing a very thin homoepitaxial surface at room temperature. Surface pits arise from impurity effects. Semi-contact image.
Image and sample courtesy of Dr. Jerry Floro, University of Virginia, USA

SPM principle: Amplitude modulation AFM
Spiral Strucrure of Si(111)
GaAs atomic steps
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