Ge(Si) islands grown on relaxed SiGe buffer layer
The image was obtained M.V. Shaleev. Institute for Physics of Microstructures Russian Academy of Sciences, Nizhni Novgorod, the Russian Federation.
Sample courtesy of A.V. Novikov, I.Y Shuleshova, M.V. Shaleev Institute for Physics of Microstructures Russian Academy of Sciences.
