Ge on Si
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Ge on Si

Ge layer 300 nm, grown by MBE on a Si(001) substrate
Device: NTEGRA Aura
Image Courtesy: Dr. Mikhail Shaleev, IPM RAS

r1077-010-12_9x12_9_mkm
r1077-010-12_9x12_9_mkm
Ge on Si

size: 13x13 um
SPM principle: Amplitude modulation AFM
Ge Islands
Si buffer on Si substrate
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