GaN/AlN on Si(111)
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GaN/AlN on Si(111)

GaN/AlN layers grown by PA MBE on a Si(111) substrate)
Device: NTEGRA Aura
Image Courtesy: Dr. Mikhail Shaleev, IPM RAS

s5-promezhutochnaya_tochka-3x3_mkm
s5-promezhutochnaya_tochka-3x3_mkm
GaN/AlN on Si(111)

size: 3x3 um
SPM principle: Amplitude modulation AFM
GaN on Sapphire(0001)
Ge Islands
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