GaN on La3Ga5SiO14

GaN layer grown by PA MBE / substrate – langasite crystal La3Ga5SiO14
Device: NTEGRA Aura
Image Courtesy: Dr. Mikhail Shaleev, IPM RAS

GaN on La3Ga5SiO14

size: 3x3 um
SPM principle: Amplitude modulation AFM

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