GaAs-AlGaAs-InGaAs Heterostructure

Heterostructure GaAs-AlGaAs-InGaAs on Ge buffer layer on Si(001) substrate
Device: NTEGRA Aura
Image Courtesy: Dr. Mikhail Shaleev, IPM RAS

size: 12x12 um
SPM principle: Amplitude modulation AFM

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